Reactive Ion Etching in the Gaseous Electronics Conference Rf Reference Cell
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منابع مشابه
Reactive Ion Etching in the Gaseous Electronics Conference RF Reference Cell
This paper describes the results of using the GEC reference cell as a reactive ion etcher. Silicon wafers with layers of polysilicon and silicon dioxide on crystaline silicon patterned with photoresist have been investigated with fluorine and chlorine chemistries. Scanning electron microscopy (SEM), profilometry, and refraction techniques were used to determine the etch parameters such as etch ...
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ژورنال
عنوان ژورنال: Journal of Research of the National Institute of Standards and Technology
سال: 1995
ISSN: 1044-677X
DOI: 10.6028/jres.100.033